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Silicon Carbide (SiC) Wafers

5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2" diameter 4H wafers in stock.

All of these SiC wafers are N-type, resistivity ~0.1-0.01 Ohm.cm
For 4H 1sp wafer, price is $320/each for 10x10 pcs, $160/each for 5x5 pcs,
For 6H 1sp wafer, price is $265/each for 10x10 pcs, $165/each for 5x5 pcs,

Glass Materials!

  • Soda Lime
  • Borofloat 33
  • Bk7 Glass
  • Fused Silica
  • Single Crystal Quartz

Ultra-Thin Silicon Wafers
Soitec Silicon on Insulator Wafers

MSDS Available

Materials Safety Data Sheets Available Upon request

Below are just some of our Silicon Carbide Wafers

No.1

  • 2" 6H N-Type
  • 6H-N 2" dia,
  • Type/ Dopant : N / Nitrogen
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • D Grade,MPDä100 cm-2 D Grade,RT:0.02-0.2 Ω·cm
  • Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 327.80

No.2

  • 2" 6H N-Type
  • 6H-N 2" dia, Type/ Dopant : N / Nitrogen
  • Orientation : <0001>+/-0.5 degree
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • B Grade,MPDä30 cm-2   B Grade,RT 0.02 ~ 0.2 Ω·cm
  • Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm
  • $ 454.45

No.3

  • 2" 4H N-Type
  • 4H-N 2" dia, Type/ Dopant : N / Nitrogen
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • D Grade,MPDä100 cm-2 D Grade: RT:0.01-0.1 Ω·cm D Grade,Bow/Warp/TTV<25um
  • Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 327.80

No.4

  • 2" 4H N-Type
  • 4H-N 2" dia, Type/ Dopant : N / Nitrogen
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • B Grade,MPDä30 cm-2 B Grade:RT:0.01 - 0.1 Ω·cm B Grade,Bow/Warp/TTV<25um
  • Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 454.45

No.5

  • 3" 4H N-Type
  • 4H-N 3" dia, Type/ Dopant :< N / Nitrogen
  • Orientation : 4 degree+/-0.5 degree
  • Thickness : 350 ± 25 um
  • D Grade,MPDä100 cm-2 D Grade,RT:0.01-0.1Ω·cm D Grade,Bow/Warp/TTV<35um
  • Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 573.65

No.6

  • 3" 4H N-Type
  • 4H-N 3" dia, Type/ Dopant : N / Nitrogen
  • Orientation : 4 degree+/-0.5 degree
  • Thickness : 350 ± 25 um
  • B Grade,MPDä30 cm-2 B Grade,RT:0.01 - 0.1Ω·cm B Grade,Bow/Warp/TTV<35um
  • Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 864.20

No.7

  • 3" 4H SI
  • 4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
  • Orientation : <0001>+/-0.5 degree
  • hickness : 350 ± 25 um
  • D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
  • Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 4-10pcs
  • $ 849.30

No.8

  • 3" 4H SI
  • 4H-SI 3" dia, Type/ Dopant : Semi-insulating / V
  • Orientation : <0001>+/-0.5 degree
  • Thickness :350 ± 25 um
  • B Grade,MPDä30 cm-2 B Grade,RT:80 % ≥1E5 Ω·cm
  • Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 4-10pcs
  • $ 2,354.20

No.9

  • 2" 6H SI
  • 6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • D Grade,MPDä100 cm-2 D Grade,RT:70 % ≥1E5 Ω·cm
  • Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm 6-10pcs
  • $ 573.65

No.10

  • 2" 6H SI
  • 6H-SI 2" dia, Type/ Dopant : Semi-insulating / V
  • Orientation : <0001>+/-0.5 degree
  • Thickness : 330 ± 25 um
  • B Grade,MPDä30 cm-2 B Grade,RT:85 % ≥1E5 Ω·cm
  • Single face polished/Si face epi-ready with CMP,Surface Roughness:<0.5 nm 5-10pcs
  • $ 1,132.40

No.11

  • 4" 4H N-Type
  • 4H-N 4"dia.(100mm±0.38mm),
  • Type/ Dopant : N / Nitrogen
  • Orientation : 4.0°±0.5°
  • Thickness : 350μm±25μm
  • D Grade,MPDä100 cm-2 D Grade,0.01~0.1Ω•cm D Grade,TTV/Bow /Warp<45um
  • Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm <4pcs
  • $ 1,005.75   >=4pcs  $ 923.80   >=10pcs  $ 879.10

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