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Indium Gallium Arsenide Applications

Photodetectors

ingass photo detector
Commonly used to measure optical
power in the near IR (NIR) range.

Transitors

indium gallium transistor

We sell the InGaAs and InP Substrates.

One concern with growing InGaAs on silicon is lattice mismatch.

Our engineers may be able to help yu in this regard. Please email us today.


InGaAs Wafers In Stock

InGaAs is a high-mobility semiconductor that promises to increase a transistor's performance for high-frequency applications.

Current InGaAs Inventory - Buy Online!

50.8mm Undoped (100) 350um SSP
Epi: Lattice matched n-type InGaAs:Si[100]±0.5°, thickness: 1.0um(±20%), Nc=1E17 -1E18/cc.
Sealed in individual wafer gridContainer. Substrate: 2" Indium Phosphide wafers, P/E 2"Ø×350±25µm.

Epi: Lattice matched p-type InGaAs:Zn[100]±0.5°, thickness: 1.0um(±20%),Nc=1E17 -1E18/cc.
Sealed in individual wafer gridContainer.
Substrate: Indium Phosphide wafers, P/E 2"Ø×350±25µm.

50.8mm InP/InGaAs/InP Epi wafers
Substrate: Indium Phosphide wafers, P/E 2"Ř×380ą25ľm, n-type P:S[100]ą0.5°,EDP<1E4/cm2.
One-side-polished, back-side matte etched, SEMI Flats.
Epi 1: InGaAs:[100] (100nm, etching stop layer).
Epi 2: InP:[100](50nm, bonding layer).

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